Product Description

13003 / MJE13003 TO-126 Transistor (NPN)

Name: 13003 TO-126 Transistor
Brand: HIMASTORES
SKU: HMJ844
Price: 10.00 KES
Availability: InStock

HighVoltage, HighSpeed Switching Transistor

The 13003, commonly referred to as the MJE13003, is a highvoltage, highspeed NPN power transistor housed in a TO126 package [citation:1][citation:6]. It is specifically designed for power switching inductive circuits where fall time is critical, making it particularly suited for 115V and 220V switchmode power supply (SMPS) applications [citation:1][citation:7].

Device Type: NPN Bipolar Junction Transistor (BJT)

Package: TO126 (also available in SOT32, TO-92) [citation:2][citation:5]

Collector-Emitter Voltage (VCEO): 400V [citation:2][citation:8]

Collector Current (IC): 1.5A (DC) [citation:6][citation:8]

Ensure correct pin identification. The standard configuration is Pin 1: Base, Pin 2: Collector, Pin 3: Emitter. The collector is electrically connected to the metal mounting tab. Some packages may have a different pinout, so verify before assembly [citation:2][citation:11].

Do not exceed the maximum ratings to prevent permanent damage.

Key Technical Specifications

Parameter	Value	Notes
:-	:-	:-
Collector-Base Voltage (VCBO)	700V	High blocking capability [citation:2][citation:8]
Collector-Emitter Voltage (VCEO)	400V	Maximum continuous voltage [citation:2][citation:8]
Emitter-Base Voltage (VEBO)	9V	[citation:2][citation:8]
Collector Current (IC)	1.5A	Continuous current rating [citation:6][citation:8]
Peak Collector Current (ICM)	3A	Non-repetitive peak current [citation:2][citation:6]
Power Dissipation (Ptot)	20W - 40W	Depends on manufacturer and mounting conditions [citation:5][citation:6]
DC Current Gain (hFE)	8 - 40	At IC 0.5A, VCE 2V [citation:2][citation:11]
Gain Bandwidth Product (fT)	4 MHz	Typical value [citation:2][citation:8]
Operating Junction Temperature	150°C	Maximum [citation:2][citation:6]

= Key Features =

High Voltage Capability - 400V VCEO and 700V VCBO for mains voltage switching applications [citation:1][citation:7]

HighSpeed Switching Fast fall time for efficient power conversion [citation:1]

High Current Gain - Low drive requirements for switching circuits [citation:2][citation:11]

Widely Available - Multiple manufacturers offer equivalent and replacement devices [citation:5][citation:9]

= Applications =

Switch-mode power supplies [citation:1][citation:5]
Electronic lighting ballasts [citation:12]
Inverters and converters [citation:1][citation:12]
Motor controls [citation:1]
Solenoid and relay drivers [citation:1]
High-voltage switching circuits [citation:3]

HighVoltage NPN 400V VCEO rating for mains power switching applications

HighSpeed Switching Fast switching performance for efficient SMPS designs

√ Ready to use Standard TO126 package for easy through-hole mounting

√ Widely available Reliable and welldocumented power switching transistor

√ Multiple variants - Available with different hFE ratings to suit circuit requirements

Package Includes

1x 13003 / MJE13003 NPN Power Transistor (TO-126 Package)

This transistor is produced by many manufacturers with various prefixes (e.g., MJE13003, KSE13003, ST13003) that all generally share the same core specifications [citation:5][citation:9]

For reliable operation, ensure adequate heatsinking when dissipating significant power [citation:5]

Direct equivalents include 5302D, BLD123D, BUJ101, BLD135D, BUL381D [citation:5]

For precise pin identification, the standard TO-126 configuration is Base (1), Collector (2), Emitter (3) [citation:2][citation:11].

Some datasheets list the maximum collector dissipation as 1.25W without a heatsink and up to 40W with proper heatsinking [citation:3][citation:6].

Avoid exceeding the maximum voltage ratings the collector-emitter voltage (VCEO) of 400V is critical [citation:2][citation:8]

-Avoid exceeding the maximum junction temperature of 150°C [citation:2][citation:6]

-Avoid using this transistor as a direct replacement without confirming the pinout and specifications