SS8050 Plastic-Encapsulate Power Transistor NPN – KSH 5 at HIMASTORES Mombasa – best electronics in Kenya

SS8050 Plastic-Encapsulate Power Transistor NPN

SKU: HMJ166 Category: Transistors
KSH 5.00
In Stock

Product Description

SS8050 NPN Power Transistor

PlasticEncapsulated MediumPower Switching and Amplification Transistor

The SS8050 is a widely used NPN bipolar junction transistor (BJT) designed for generalpurpose switching and amplification applications [citation:8]. This mediumpower transistor is commonly available in both TO92 and SOT23 packages, making it suitable for throughhole and surfacemount designs [citation:7][citation:1].

Medium Power Handling - Supports up to 1.5A collector current for driving moderate loads
High Current Gain hFE range of 85400 for reliable amplification
Collector-Emitter Voltage (VCEO): 25V maximum [citation:6]
Collector-Base Voltage (VCBO): 40V maximum [citation:6]
Emitter-Base Voltage (VEBO): 5V maximum [citation:6]
Complementary PNP pair is the SS8550 transistor for push-pull configurations [citation:12]
Power dissipation varies by package: 300mW for SOT23, 1W for TO92 [citation:2][citation:13]

Technical Specifications

ParameterValue
Transistor TypeNPN
Collector Current (IC)1.5A maximum
Collector-Emitter Voltage (VCEO)25V maximum
Collector-Base Voltage (VCBO)40V maximum
Emitter-Base Voltage (VEBO)5V maximum
DC Current Gain (hFE)85 to 400 (varies by rank) [citation:13]
Transition Frequency (fT)100MHz minimum [citation:6]
Power Dissipation300mW (SOT23) / 1W (TO92)
Operating Temperature-55°C to +150°C [citation:13]
Package OptionsTO92, SOT23, SOT-89

= hFE Classification Ranks (TO-92 Package) =

RankhFE Range
B85-160 [citation:13]
C120-200 [citation:13]
D160-300 [citation:13]
D3300-400 [citation:13]

> For SOT23 package, hFE ranks are typically 120200, 200350, and 300400 [citation:6]

Check the marking on the component for the specific gain rank

Pin Configuration (TO-92 Package)

When viewing the flat side with leads pointing downward, the pinout from left to right is:

PinFunction
1Emitter (E) [citation:7]
2Base (B) [citation:7]
3Collector (C) [citation:7]

> Always verify pinout with the manufacturer's datasheet as variations may exist

Key Features

+High Collector Current - 1.5A for driving relays, motors, and LEDs

+Low Saturation Voltage - VCE(sat) of 0.5V at 800mA for efficient switching [citation:6]

+Fast Switching 100MHz transition frequency for highspeed applications

+Complementary PNP Pair Use with SS8550 for pushpull circuits [citation:12]

= Applications =

  1. Audio amplifiers and signal amplification circuits [citation:5][citation:8]
  2. Switching applications (relay drivers, LED drivers) [citation:8]
  3. Power management and voltage regulation circuits [citation:5]
  4. Logic level conversion and switching
  5. Sensor signal conditioning
Reliable and CostEffective A staple component for hobbyist and professional projects
ThroughHole and SMD Options Versatile package choices for different PCB designs

√ Direct substitutes include S8050, 2N3904, BC547, MPS650 [citation:4]

√ Complementary pair: SS8550 PNP transistor

√ Widely available and well-documented

Troubleshooting

Transistor not switching:

  • Verify base-emitter voltage is above 0.7V
  • Check base resistor value (typically 1kΩ to 10kΩ)
  • Ensure collector current does not exceed 1.5A

Excessive heat:

  • Verify load current is below maximum rating
  • Check for adequate heat dissipation (especially in SOT-23 package)
  • Use higher gain rank for lower base drive requirements