D882 TO-126 Transistor – KSH 10 at HIMASTORES Mombasa – best electronics in Kenya
Home / Transistors / D882 TO-126 Transistor

D882 TO-126 Transistor

SKU: HMJ835 Category: Transistors
KSH 10.00
In Stock

Product Description

D882 / 2SD882 TO-126 Transistor (NPN)

3A NPN Medium Power Transistor for Switching and Amplification

The D882 (2SD882) is a mediumpower NPN bipolar junction transistor (BJT) housed in a TO126 package. It is a highperformance, generalpurpose transistor designed for switching and amplification applications requiring up to 3A of collector current. Its complementary PNP transistor is the 2SB772.

Device Type: NPN Bipolar Junction Transistor (BJT)
Package: TO126 (SOT32)
Maximum Collector Current (IC): 3A
PNP Complement: 2SB772
Ensure correct pin identification: Pin 1 is the Base, Pin 2 is the Collector, and Pin 3 is the Emitter [citation:4][citation:8].
Do not exceed the maximum ratings to prevent permanent damage.

Key Technical Specifications

ParameterValueNotes
:-:-:-
Collector-Emitter Voltage (VCEO)30VMaximum continuous voltage [citation:1][citation:9]
Collector-Base Voltage (VCBO)40V[citation:3][citation:9]
Emitter-Base Voltage (VEBO)5V to 6V[citation:1][citation:3][citation:9]
Collector Current (IC)3AContinuous current rating [citation:1][citation:3]
Power Dissipation (Ptot)1.25W (Free air) / 10W (With heatsink)[citation:1][citation:3][citation:9]
DC Current Gain (hFE)60 - 400Depends on ranking [citation:2][citation:9][citation:11]
Transition Frequency (fT)90 MHzTypical value [citation:1][citation:3]
Operating/Storage Temperature-55°C to +150°C[citation:1][citation:3][citation:9]

= Key Features =

High Current Capability 3A continuous collector current for driving mediumpower loads [citation:1][citation:3]

Low Saturation Voltage - 0.5V maximum at IC = 2A ensures low conduction losses [citation:1][citation:9]

Medium Power Dissipation - 10W with proper heatsinking for power applications [citation:3][citation:11]

Complementary PNP Design - Designed as a complementary transistor to the 2SB772 (PNP) [citation:5][citation:11]

High Gain Range - Available in hFE rankings from 60 to 400 [citation:2][citation:9]

= Applications =

  • Voltage regulation circuits [citation:5]
  • Relay drivers [citation:5]
  • Generic switching applications [citation:5][citation:11]
  • Audio power amplifiers [citation:5][citation:11]
  • DC-DC converters [citation:5]
  • Motor drivers and solenoid controls [citation:11]
High Current Capability 3A collector current for driving mediumpower loads
Versatile Performance - Suitable for both switching and amplification applications

√ Ready to use Standard TO126 package for easy through-hole mounting

√ Multiple hFE ranks - Available in R, O, Y, and GR ranks with different gain ranges [citation:9]

√ High transition frequency - 90 MHz for good performance in amplifier circuits

Package Includes

  1. 1x D882 NPN Transistor (TO-126 Package)
For reliable operation, ensure adequate heatsinking when dissipating significant power (above 1.25W)
This device is available in hFE ranking variants: R (60120), O (100200), Y (160320), and GR (200400) [citation:9]
For direct replacements, consider BD349, MJE802, BD185, BD189, TIP122L, 2SD1693 [citation:11]
For precise pin identification, the standard TO-126 configuration is Base (1), Collector (2), Emitter (3) [citation:4][citation:8].
This transistor is also known as 2SD882, with the "2S" prefix often omitted in component markings.

Avoid exceeding the maximum voltage ratings the collector-emitter voltage (VCEO) of 30V is critical

-Avoid exceeding the maximum junction temperature of 150°C

-Avoid using this transistor as a direct replacement without confirming the pinout and specifications