D669 TO-126 Transistor – KSH 10 at HIMASTORES Mombasa – best electronics in Kenya

D669 TO-126 Transistor

SKU: HMJ839 Category: Transistors
KSH 10.00
In Stock

Product Description

D669 / 2SD669 TO-126 Transistor (NPN)

1.5A High-Voltage NPN Transistor for Audio Power Amplifiers

The D669 (2SD669) is a highvoltage NPN bipolar junction transistor housed in a TO126 package [citation:1][citation:9]. It is specifically designed for low-frequency power amplifier applications and serves as the complement to the PNP transistor 2SB649/2SB649A [citation:1][citation:5][citation:7].

Device Type: NPN Bipolar Junction Transistor (BJT)
Package: TO126 (also available in TO92L, SOT-89) [citation:3][citation:7]
Maximum Collector Current (IC): 1.5A (DC); 3A (peak) [citation:1][citation:5][citation:9]
PNP Complement: 2SB649 / 2SB649A [citation:1][citation:5][citation:9]
Ensure correct pin identification: Pin 1 is the Emitter, Pin 2 is the Collector, and Pin 3 is the Base [citation:2][citation:5][citation:9]. The collector is electrically connected to the metal mounting tab [citation:9].
Do not exceed the maximum ratings to prevent permanent damage.

Key Technical Specifications

ParameterValueNotes
:-:-:-
Collector-Base Voltage (VCBO)180V[citation:2][citation:5][citation:9]
Collector-Emitter Voltage (VCEO)120V (2SD669) / 160V (2SD669A)Maximum continuous voltage [citation:1][citation:5][citation:9]
Emitter-Base Voltage (VEBO)5V[citation:2][citation:5][citation:9]
Collector Current (IC)1.5AContinuous current rating [citation:1][citation:2][citation:5]
Peak Collector Current (ICM)3ANon-repetitive peak current [citation:5][citation:9]
Power Dissipation (Ptot)1W (at Ta25°C) / 20W (at Tc25°C)With appropriate heatsink [citation:5][citation:9]
DC Current Gain (hFE)60 - 320Depends on rank: B(60120), C(100200), D(160-320) [citation:2][citation:5][citation:9]
Transition Frequency (fT)140 MHzTypical value [citation:2][citation:5][citation:9]
Operating/Storage Temperature-55°C to +150°C[citation:2][citation:5][citation:9]

= Key Features =

High Voltage Capability 180V VCBO and 120V/160V VCEO for highvoltage applications [citation:1][citation:5]

Complementary Pair - Designed as a complementary transistor to the 2SB649/2SB649A (PNP) [citation:1][citation:5]

High Gain Linearity Excellent hFE linearity for lowdistortion audio applications [citation:1]

Low Saturation Voltage - 1.0V max at IC = 500mA ensures low conduction losses [citation:2][citation:5]

High Transition Frequency - 140 MHz for good audio performance [citation:1][citation:5][citation:9]

= Applications =

  • Low-frequency power amplifiers [citation:1][citation:5][citation:9]
  • Audio amplifier driver stages [citation:4]
  • General-purpose power amplification [citation:7]
HighVoltage NPN 180V VCBO rating for high-power amplifier applications
Excellent Complementary Pair - Widely used with 2SB649 for audio amplifier designs

√ Ready to use Standard TO126 package for easy through-hole mounting

√ Multiple hFE ranks - Choose B, C, or D rank for gain matching in amplifier circuits

√ High transition frequency - 140 MHz for good audio performance


Package Includes

  1. 1x D669 / 2SD669 NPN Transistor (TO-126 Package)
For reliable operation, ensure adequate heatsinking when dissipating significant power (above 1W)
This transistor is available in hFE ranking variants: B (60120), C (100200), and D (160-320) [citation:2][citation:5][citation:9]
For higher voltage variants, consider 2SD669A with VCEO of 160V [citation:1][citation:2][citation:5]
SMD equivalents are available in SOT-89 package (UTC 2SD669AC/AB/AD) [citation:7]
For precise pin identification, the standard TO-126 configuration is Emitter (1), Collector (2), Base (3) [citation:2][citation:5][citation:9].
The component may be marked simply as "D669" on the package (the "2S" prefix is often omitted) [citation:5][citation:8].

Avoid exceeding the maximum voltage ratings the collector-emitter voltage (VCEO) of 120V (or 160V for 'A' variant) is critical [citation:1][citation:5]

-Avoid exceeding the maximum junction temperature of 150°C [citation:2][citation:5]

-Avoid using this transistor as a direct replacement without confirming the pinout and specifications