B649 TO-126 Transistor
KSH 10.00
In Stock
The B649 (also designated as 2SB649) is a highvoltage PNP bipolar junction transistor housed in a TO126 package [citation:1][citation:2][citation:4]. It is designed as a complementary device to the NPN transistor 2SD669, forming a popular pair for low-frequency power amplifier circuits [citation:1][citation:3][citation:4].
| Parameter | Value | Notes |
|---|---|---|
| :- | :- | :- |
| Collector-Base Voltage (VCBO) | -180V | [citation:1][citation:2][citation:4] |
| Collector-Emitter Voltage (VCEO) | 120V (B649) / 160V (B649A) | Maximum continuous voltage [citation:1][citation:2] |
| Emitter-Base Voltage (VEBO) | -5V | [citation:1][citation:2] |
| Collector Current (IC) | -1.5A | Continuous current rating [citation:1][citation:2] |
| Peak Collector Current (ICM) | -3A | Non-repetitive peak current [citation:2][citation:4] |
| Power Dissipation (Ptot) | 1W (at Ta25°C) / 20W (at Tc25°C) | With appropriate heatsink [citation:1][citation:2][citation:4] |
| DC Current Gain (hFE) | 60 - 320 | Depends on rank: B(60120), C(100200), D(160-320) [citation:1][citation:4] |
| Transition Frequency (fT) | 140 MHz | Typical value [citation:1][citation:2] |
| Operating/Storage Temperature | -55°C to +150°C | [citation:1][citation:2] |
= Key Features =
High Voltage Capability 180V VCBO and 120V/160V VCEO for highvoltage applications [citation:1][citation:2]
Complementary Pair - Designed as a complementary transistor to the 2SD669/2SD669A (NPN) [citation:1][citation:3]
High Gain Linearity Excellent hFE linearity for lowdistortion audio applications [citation:1][citation:4]
Low Saturation Voltage - 1V max at IC = 500mA ensures low conduction losses [citation:1][citation:4]
√ Ready to use Standard TO126 package for easy through-hole mounting
√ Multiple hFE ranks - Choose B, C, or D rank for gain matching in amplifier circuits
√ High transition frequency - 140 MHz for good audio performance
Avoid exceeding the maximum voltage ratings the collectoremitter voltage (VCEO) of 120V (or -160V for 'A' variant) is critical
-Avoid exceeding the maximum junction temperature of 150°C [citation:1][citation:2]
-Avoid using this transistor as a direct replacement without confirming the pinout and specifications
