The BD238 is a mediumpower PNP bipolar junction transistor (BJT) housed in a TO126 (SOT32) plastic package[citation:1][citation:4]. It is designed as a complementary device to the NPN transistor BD237[citation:2]. This transistor is wellsuited for use in driver stages of audio amplifiers and general-purpose power switching applications[citation:10][citation:11].
| Parameter | Value | Notes |
|---|---|---|
| :- | :- | :- |
| Collector-Base Voltage (VCBO) | -100V | [citation:1][citation:12] |
| Collector-Emitter Voltage (VCEO) | -80V | Maximum continuous voltage[citation:1][citation:4] |
| Emitter-Base Voltage (VEBO) | -5V | [citation:1][citation:12] |
| Collector Current (IC) | -2A | Continuous current rating[citation:1][citation:12] |
| Power Dissipation (Ptot) | 25W | At case temperature of 25°C[citation:1][citation:12] |
| DC Current Gain (hFE) | 40 min | At IC 150mA, VCE 2V[citation:12] |
| Transition Frequency (fT) | 3 MHz | Typical value[citation:1][citation:10] |
| Operating Junction Temperature | 150°C | Maximum[citation:1][citation:12] |
= Key Features =
Complementary PNP Design - Designed as a complementary transistor to the BD237 (NPN)[citation:2]
High Voltage Capability - 80V VCEO and 100V VCBO for power applications[citation:1][citation:12]
High Current Capability 2A continuous collector current for mediumpower applications[citation:1]
Low Saturation Voltage 0.6V maximum at IC = 1A ensures low conduction losses[citation:12]
√ Ready to use A standard and welldocumented power transistor
√ Medium power capability - Suitable for a wide range of applications
Avoid exceeding the maximum voltage ratings the collectoremitter voltage (VCEO) of 80V is critical
-Avoid exceeding the maximum junction temperature of 150°C
-Avoid using this transistor as a direct replacement without confirming the pinout and specifications